Remote Plasma Sources
Semiconductor and Electronic Thin Film applications use plasma sources to generate low-energy ions and radicals to react with material surfaces and chamber walls to remove contaminants and act as a precursor to aid in material deposition. MKS provides multiple options for radical generation including Toroidal and Microwave based Remote Plasma Sources supporting Fluorine, NF3, oxygen, nitrogen and hydrogen process chemistries.
- Plasma & Reactive Gas Solutions
- Remote Plasma Sources
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Paragon® 8.0 Slm NF3 Flow Intelligent Remote Plasma Source
For cleaning CVD and ALD/ALE process chambers, the Paragon remote plasma source is designed for high gas dissociation rates (> 98%) of NF3 with gas flows up to 8 slm and pressures up to 10 Torr. This leading-edge performance translates into increased process throughput and repeatable process results. The Paragon design incorporates a proprietary plasma block design with a Plasma Electrolytic Oxidation coating for low particle, long block life that delivers lower cost of ownership.
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Remote Plasma Sources For Process Applications
MKS remote plasma sources deliver high density reactive radicals improving on-wafer cleaning and deposition throughput. Solutions consist of a fully integrated, self-contained unit designed for quick on-chamber installation providing fast, reliable plasma ignition of O2, Hydrogen and Nitrogen gases in a customer configurable package. All solutions are equipped with intelligent power control and EtherCAT® diagnostics supporting Industry 4.0.
