Schottky diodes are majority carrier diodes formed by plating a layer of metal on a layer of doped semiconductor, which forms a rectifying junction. The type of metal and the type of dopant in the semiconductor determines the diode’s barrier height, which is a measure of the amount of energy required to force the diode into forward conduction. MACOM produces Si Schottky diodes as well as GaAs Schottky diodes for use as signal detectors or in frequency mixers.
The intrinsic cutoff frequencies of these Schottky junction devices exceed 1 THz, making them well-suited for use in mixers and detectors operating in the frequency bands from 60 GHz into the hundreds of GHz bands.
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