Showing results: 211 - 225 of 225 items found.
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Smiths Interconnect
Switched Filter Banks typically include multiple filter topologies, including PIN diode and MMIC switch sub-circuits to achieve operational bandwidths of greater than 3 octaves. Pin Diode Based Switched Filter Banks provide the highest level of signal isolation, higher operating power levels, and lower insertion loss and achieve switching speeds of < 40 nanoseconds. GaAs MMIC Based Switched Filter Banks provide switching times as low as 10 nanoseconds with very low power consumption and have the inherent advantage of supporting multi-octave frequency bands with extremely low power consumption.
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Macom Technology Solutions Holdings Inc.
MACOM’s High-Power Switch and Bias modules are extensively used in 4G and 5G TDD base stations as well as aerospace and defense applications. The PIN Diode Switch features high power handling, low insertion loss, and super board band performance. The integrated bias controller utilizes a boost circuit and provide the driver circuitry to the switch. The modules require only a single 5 V supply, and a single TX / RX control signal which greatly reduced the customer design complexity.
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Fairview Microwave Inc.
Fairview Microwave’s single-pole single-throw (SPST) and double-pole double-throw (DPDT) PIN diode waveguide switches feature fully integrated WR-10 and WR-12 waveguide ports and cover popular E-band (60 to 90 GHz) and W-band (75 to 110 GHz) frequencies. Switch circuits integrate low loss Fin-line assemblies with high performance GaAs beam-lead diodes that results in 4 dB insertion loss, greater than 25 dB of Isolation and fast switching speed < 300 nsec.
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Appointech, Inc.
PIN photodiode is a kind of photo detector, it can convert optical signals into electrical signals.This technology was invented in the latest of 1950's. There are three regions in this type of diode. There is a p-region an intrinsic region and an n-region. The p-region and n-region are comparatively heavily doped than the p-region and n-region of usual p-n diodes. The width of the intrinsic region should be larger than the space charge width of a normal p-n junction. The PIN photo diode operates with an applied reverse bias voltage and when the reverse bias is applied, the space charge region must cover the intrinsic region completely. Electron hole pairs are generated in the space charge region by photon absorption. The switching speed of frequency response of photo diode is inversely proportional to the life time. The switching speed can be enhanced by a small minority carrier lifetime. For the photo detector applications where the speed of response is important, the depletion region width should be made as large as possible for small minority carrier lifetime as a result the switch speed also increases.
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Macom Technology Solutions Holdings Inc.
MACOM offers a complete portfolio of high-power switch and LNA modules to cover many sizes and classes of 5G base stations, including Macro Cell, Small Cell, and massive-MIMO AAS in frequency bands up to 6GHz. SOI-based switch modules with up to 20W LTE power handling are extensively used in mMIMO and Small Cell radios, and MACOM proprietary PIN diode Switch modules with up to 160W LTE power handling are widely deployed in Macro radios. Featuring ultra-broadband, low noise figure and excellent power handling and reliability, the family of Switch LNA modules are also well suited for a variety of TDD based communication systems in commercial and military applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Series 105 -
Pickering Electronics
• SoftCenter™ construction• Highest quality instrumentation grade switches• Encapsulated in a plastic package with internal mu-metal magnetic screen• Wide range of switch confi gurations -Form A, 1 Form B, 2 Form A, 1 Form C• Two pole relay requires the same board area as the single pole type• Dry and mercury wetted switches are available with the same pin configuration and footprint.• Many benefits compared to industry standard relays. Learn more here >.• Insulation resistance greater than 10E12 Ohms (1TOhms) for dry Form A devices• 5, 12 and 24 Volt coils are standard, with or without internal diode• 100% tested for dynamic contact resistance
