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MOSFET
Metal Oxide Semiconductor Field Effect Transistor
- Scientific Test, Inc.
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Automated Discrete Semiconductor Tester (ATE)
5000E
Same Proven Technology as all 5000 Series Testers. High Speed Single Test Measure. Capable of Testing Multiple and Mixed Devices. 1KV Standard, 2KV Optional. 1NA to 50A Standard, 100A Optional. 0.1NA Resolution. Complete Self Test. Auto-Calibration. RDSON to 0.1MOHM Resolution. Windows Application Software. Optional Scanner. Optional Wafer Mapping. Optional Curve Trace. MOSFET, IGBT, J-FETTriac, SCR, Sidac, Diac, Quadrac, STS, SBS Transistor, Diode, Opto, Zener Regulator, MOV, Relay. UNDER $23,000.00
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MOSFETs
Vishay is one of the world's foremost manufacturers of power MOSFETs. The Vishay Siliconix MOSFET product line includes a diverse range of advanced technologies in more than 30 package types, from the chipscale MICRO FOOT® and thermally advanced PowerPAK® families to the classic “TO” transistor outline. Single- and multi-die MOSFETs are available with integrated features such as Schottky body diodes and ESD protection, while our unique PowerPAIR® devices combine optimized combinations of MOSFETs for synchronous buck converters and other applications in a single package.
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MOSFETs
Products for a variety of applications, such as power supply, motor drive, high frequency amplification, and load switches.
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Power MOSFETs
ST's power MOSFET portfolio offers a broad range of breakdown voltages from –100 to 1700 V, with low gate charge and low on-resistance, combined with state-of-the art packaging. ST's process technology for both high-voltage power MOSFETs (MDmesh™) and low-voltage power MOSFETs (STripFET) ensures an enhanced power handling capability, resulting in high-efficiency solutions. Power MOSFETs belong to the STPOWER family.
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MOSFETs For Amplifier
These are enhanced power MOSFETs with excellent frequency characteristics. They are ideal for audio amplifier output.
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MOSFETs For Amplifier
These are enhanced power MOSFETs with excellent frequency characteristics. They are ideal for audio amplifier output.
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SiC MOSFETs
Bring the advantages of innovative wide bandgap materials (WBG) to your next design thanks to SiC MOSFETs. With an extended voltage range, from 650 to 2200 V, ST's silicon carbide MOSFETs offer one of the most advanced technology platforms featuring excellent switching performance combined with very low on-state resistance per area.
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MOSFET Drivers
Renesas' product portfolio includes MOSFET gate drivers for 3-phase motor applications. The drivers have built-in detection/protection functions and are suitable for inverter driver applications such as EGR, HVAC and EPS. Line up the products with LDOs for MCU, 24V battery system capability, built-in current sense amplifiers, and motor angle detection function. The products support unit downsizing and high performance.
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MOSFET Drivers
The bridge driver products handle voltages up to 100V, with industry-leading gate rise and fall times and exceptional input-to-output propagation delay performance. Select parts are available in 4mm x 4mm and 3mm x 3mm DFN packages which meet IPC-2221 creepage and clearance specifications for high-voltage systems.
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Modules - Modules, MOSFET
Vishay's high-voltage MOSFET modules are a range of devices with voltage ratings of 100 V or 500 V and available in full-bridge or single-switch configurations.
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General-Purpose Power MOSFETs
*Support for high-efficiency drive and low heat design*MOSFETs suitable for switching (motor drive, etc.) and load switch applications*Low on-resistance, high-speed switching, and high-robustness
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Power MOSFETs For Automotive
Renesas achieves on-resistance specs among the lowest in the world through the use of ultra-fine technology, such as our 0.25um ANL3 process employing the latest trench technology, and package technology utilizing a new multi-bonding mount technology.
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Built-in MOSFET Integrated SiP
Renesas Electronics offers SiP products with integrated MOSFETs to enable easy configuration of high-performance multi-phase power supplies. They combine in a single package either controller, driver, and MOSFETs or driver and MOSFETs. These products make it easy to build a high-performance DC/DC converter while reducing stray capacitance and inductance, and achieving higher mounting density.
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MOSFETs For High Frequency Amplifier
The MOSFETs shown below are best suited for amplification of high-frequency signals.
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MOSFETs For High Frequency Amplifier
The MOSFETs shown below are best suited for amplification of high-frequency signals.
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Rad Hard MOSFET Drivers
Renesas' broad portfolio of radiation hardened MOSFET drivers provide highly reliable performance in space and harsh radiation environments.
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MOSFETs, MESFETs, and Schottky Diodes
Semiconductor Module
The Semiconductor Module allows for detailed analysis of semiconductor device operation at the fundamental physics level. The module is based on the drift-diffusion equations, using isothermal or nonisothermal transport models. It is useful for simulating a range of practical devices including bipolar, metal semiconductor field-effect transistors (MESFETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), Schottky diodes, thyristors, and P-N junctions.
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General Purpose Low-side MOSFET Drivers
Renesas' family of low-side FET drivers are very high-speed matched dual-drivers capable of delivering peak currents of 2.0 amps into highly capacitive loads and excellent at driving large capacitive loads with minimal delay and switching times. The high-speed performance is achieved by means of a proprietary "Turbo-Driver" circuit that speeds up input stages by tapping the wider voltage swing at the output. Improved speed and drive capability are enhanced by matched rise and fall delay times. These matched delays maintain the integrity of input-to-output pulse-widths to reduce timing errors and clock skew problems. This improved performance is accompanied by a 10 fold reduction in supply currents over bipolar drivers, yet without the delay time problems commonly associated with CMOS devices. Dynamic switching losses are minimized with non-overlapped drive techniques.
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Active Switching Power Supply Using Mosfet, 125 KW, P/N 5940C2
- Active Switching Power Supply Using MOSFET, 125 KW, P/N 5940C2- Input: 480 VAC, 150 Amps, 3 PH, 60 Hz- Output: 0 to 50 VDC, 2500 Amps max- Ten modules in parallel, each module is rated for 0 to 50 VDC, 300 Amps- PLC Control provides Positive Polarity, Negative Polarity and Shuts OFF- Start / Stop capability and EPO- Output voltage and current are displayed on the voltmeter and ammeter- PLC supplied by the customer. We provide a PLC interface only- Indoor enclosure dimensions: 65″W x 50″H x 36″D or (TBD)- Estimated weight: 2000 lbs. or (TBD)
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ORing FET Control
Renesas' ORing MOSFET Controllers with a suitably sized N-Channel power MOSFET(s) increase power distribution efficiency and availability when replacing a power ORing diode in high-current applications. They provide gate drive voltage for the MOSFET(s) with a fully integrated charge pump.
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RF Power Transistors
Silicon MOSFET
Macom Technology Solutions Holdings Inc.
At MACOM we offer a broad range of silicon bipolar transistor products designed for applications ranging from DC to 3.5 GHz. Our silicon bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our all-gold metallization fabrication processes ensure high performance and long term reliability for ground and space applications.
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Power Discretes
Our power discrete products are high-quality solutions for a wide range of high-voltage and high-power applications. They include a variety of high-voltage Switch Mode Power Supply (SMPS) transistors—Insulated-Gate Bipolar Transistors (IGBTs) Silicon Carbide (SiC) MOSFETs and Silicon MOSFETs—Diodes and Radio Frequency (RF) MOSFETs. Many of our products are offered in single- and combi-packaged options across a variety of voltage ratings, currents, and package styles.
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Resistance Test Systems
QT-3000 Series
Developed for thermal resistance test of Transistor MOSFET IGBT DIODE.
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Thrust Series Bassheads
Portable Bass Head with Mosfet Preamp and Thrust Compressor, with options for 250 and 500 Watt.
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Test Diodes
TRd, TRs, TRds equipment family
The equipment is designed to test IGBTs, MOSFETs and free wheeling Diodes from single chip to complex power modules and IPMs.
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Power ICs - VRPower® (DrMOS) - Power Stage
The Next Generation VRPower® Power Stage, Vishay’s family of VRPower modules offers an integrated MOSFET and driver power stage with unsurpassed performance. The flagship device, SiC620R is capable of 70 A and achieves more than 95 % efficiency in a typical multiphase buck converter design. The device has several package enhancements that enable it to offer superior MOSFET dynamic performance. Combined with Vishay’s state-of-the-art Gen IV MOSFET technology, these enhancements enable 3 % better efficiency and over 50 °C lower operating temperatures compared to previous generation DrMOS devices while shrinking the footprint by 33 %.
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DrMOS (Driver + FET)
Renesas' high-performance DrMOS power modules combine a high-performance FET driver and MOSFETs in an advanced package to create high-density DC/DC converters.
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PathWave IC-CAP BSIM4 Model Extraction Package
W7025E
The W7025E PathWave IC-CAP BSIM4 Model Extraction Package provides measurement and extraction procedures for the BSIM4 industry-standard model for MOSFET devices.
