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Photodiode
convert's light into current.
See Also: Diode, Laser Diode, Zener Diode, Diode Test, Photodiode Arrays
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Photodiodes
Photodiodes are a type of detector, devices that generate an electrical signal when illuminated by light. ACP offers a variety of different types of photodiodes, including InGaAs PIN photodiodes.
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Photodiodes
Avalanche
Similar to photomultipliers, avalanche photodiodes are used to detect extremely weak light intensities. Si APDs are used in the wavelength range from 250 to 1100 nm, and InGaAs is used as semiconductor material in APDs for the wavelength range from 1100 to 1700 nm.
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Photodiode
A high sensitivity receiver in a fiber pigtail coupled package, it includes a high speed InGaAs avalanche photodiode with a high gain TIA in a hermetically sealed coaxial package. It incorporates an LC/UPC pigtail and a flexible printed circuit (FPC). The signal GND and a receptacle are electrically isolated in this APD receiver.
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Photodiodes
Opto Diode manufactures high quality standard and custom photodiodes. Our wide range of standard device feature low dark current and low capacitance. The silicon detectors are ideal for general purpose applications, laser monitoring, position sensing, measuring photons, electrons, or X-rays, or for detecting sun and rain applications. The devices operate from the deep UV to the near-infrared wavelengths.
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Avalanche Photodiodes
Si APDs
Silicon avalanche photodiodes are used in the wavelength range between 250 nm and 1100 nm. The avalanche effect of these photodiodes makes them well suited for the detection of extremely weak light intensities.
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Avalanche Photodiodes
Excelitas offers Avalanche Photodiodes (APDs) on both Silicon (Si) and InGaAs materials. Si APDs cover the spectral range of 400 nm to 1100 nm and the InGaAs APDs cover 950 nm to 1550 nm. An Avalanche Photodiode (APD) provides higher sensitivity than a standard photodiode and is for extreme low-level light (LLL) detection and photon counting.
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Avalanche Photodiodes
These avalanche photodiodes (APDs) are silicon photodiodes with an internal gain mechanism. As with a conventional photodiode, absorption of incident photons creates electron-hole pairs. A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondary electrons by impact ionization. The resulting electron avalanche can produce gain factors up to several hundred.
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Photodiodes & Arrays
Excelitas utilizes Silicon and InGaAs materials for our photodiodes to provide detection from 220 nm to 1700 nm. These devices are offered in a variety of sizes to meet customer sensitivity and speed requirements. Many different types of photodiodes are available to serve various unique applications.
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Avalanche Photodiodes
Similar to photomultipliers, avalanche photodiodes are used to detect extremely weak light intensities. Si APDs are used in the wavelength range from 250 to 1100 nm, and InGaAs is used as semiconductor material in APDs for the wavelength range from 1100 to 1700 nm.
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Avalanche Photodiodes
Similar to photomultipliers, avalanche photodiodes are used to detect extremely weak light intensities. Si APDs are used in the wavelength range from 250 to 1100 nm, and InGaAs is used as semiconductor material in APDs for the wavelength range from 1100 to 1700 nm.
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PIN Photodiode
PIN photodiode is a kind of photo detector, it can convert optical signals into electrical signals.This technology was invented in the latest of 1950's. There are three regions in this type of diode. There is a p-region an intrinsic region and an n-region. The p-region and n-region are comparatively heavily doped than the p-region and n-region of usual p-n diodes. The width of the intrinsic region should be larger than the space charge width of a normal p-n junction. The PIN photo diode operates with an applied reverse bias voltage and when the reverse bias is applied, the space charge region must cover the intrinsic region completely. Electron hole pairs are generated in the space charge region by photon absorption. The switching speed of frequency response of photo diode is inversely proportional to the life time. The switching speed can be enhanced by a small minority carrier lifetime. For the photo detector applications where the speed of response is important, the depletion region width should be made as large as possible for small minority carrier lifetime as a result the switch speed also increases.
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*Photodiode Energy Sensors
Ophir photodiode laser energy sensors are able to measure low energy pulses down to 10pJ at frequencies up to 20 kHz. Silicon photodiodes for the UV and visible spectrum and Germanium photodiodes for infrared.
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SiC UV photodiodes
active areas from 0.06 mm² to 36 mm² and quadrant photodiodes for position determinationUV broadband sensitivity or with optional filters for UVA, UVB, UVC or UV indexdifferent entrance windows and housing designsown SiC chip production since 2009PTB-published high radiation hardnessPhotodiodes catalog
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10G APD Photodiodes
Macom Technology Solutions Holdings Inc.
MACOM offers the highest sensitivity avalanche photodiodes (APD) on the market to satisfy 10Gtelecom and datacom applications. Both front-illuminated and back-illuminated chips are available and usable from 1250 to 1650 nm for bit rates up to 11.3 Gb/s. Proprietary designs enable superior bandwidth, excellent temperature stability and high reliability to support market needs.
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25G APD Photodiodes
Macom Technology Solutions Holdings Inc.
MACOM offers the highest sensitivity avalanche photodiodes (APD) on the market to satisfy 28G related applications. The chips are usable from 1250 to 1650 nm for bit rates up to 28 Gb/s and 28 GBd. Proprietary designs enable superior bandwidth, excellent temperature stability and high reliability to support market needs of PAM-4 and 400G Ethernet applications.
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*Laser Photodiode Sensors
Photodiode sensors have a high degree of linearity over a large range of light power levels: from fractions of a nanowatt to about 2 mW. Above that light level, corresponding to a current of about 1 mA, the sensor saturates and reads erroneously low. Therefore, most Ophir PD sensors have a built-in and removable attenuator allows measurement of up to 3 W without saturation.
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Pyranometer with Silicon Photodiode
LP471SILICONPYRA
Pyranometer with silicon photodiade for GLOBAL SOLAR IRRADIANCE measurement.
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16-element Si photodiode array
S12362-321
The S12362/S12363 series is a back-illuminated type 16-element photodiode array specifi cally designed for non-destructive X-ray inspection. These are modified versions of our previous products (S11212 series: 1.575 mm pitch). The pitch has been changed to 2.5 mm. The back-illuminated photodiode array is also simple to handle and easily couples to scintillators without having to worry about wire damage because there are no bonding wires and photosensitive areas on the back side.
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50/100G PAM4 Pin Photodiodes
Macom Technology Solutions Holdings Inc.
MACOM offers high sensitivity PIN photodiodes with industry leading performance at speeds of 56Gbd / 100G. Proprietary designs enable operation using PAM4 modulation protocols in 50 /100G applications. The high responsivity designs have high reliability and are suitable for use in both tele-communications and datacenter networks. The high bandwidth PIN photodetectors are available in a back illuminated design (highest performance), a front illuminated design (more cost effective) and in both singlet and array form factors
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Fiber Photodiode Power Sensors
These interfaces provide communication between an attached sensor and a PC or other external control unit. They are designed to be controlled via an external device or operated autonomously using the analog output; there are no controls or display screens.
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Photodiode Burn-in Reliability Test System
58606
The Chroma 58606 PD/APD Burn-in system is a high density, multifunction and temperature controlled module based system for photo diode burn-in and lifetime test. Each module has up to 256 Source Measurement Unit channels which can source current and measure voltage in various scenarios such as one described below. The system can accommodate 7 modules for a total of 1,792 device channels.
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Full Range Photodiode Array UV-VIS-NIR-SWIRLaboratory Spectroradiometers
The SR-Series of full range laboratory spectroradiometers is ideal for a wide range of applications, including:*Solar radiance and irradiance measurements*Solar simulator test and classification*LED, laser, light source metrology*Radiometric calibration transfer*Remote sensing applications
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Ultra-Low Noise 2 kHz Photoreceiver w/ Si-PIN Photodiode
PWPR-2K-SI
Picowatt Photoreceiver series PWPR-2K with switchable gain (10 to the 9th V/A, 10 to the 10th V/A) and a bandwidth from DC to 2 kHz is the perfect choice for cw-measurements, time resolved signal acquisitions and highly sensitive modulated measurements. Si and InGaAs models cover the wavelength range from 320 to 1700 nm.
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PD-200 High-Speed High-Power Photodetector
These high speed photodiode, PD-200, is hermetically sealed, high reliability, low harmonic distortion photodiode modules designed for high optical power applications with minimum bandwidths of 20 GHz. The device is well suited for receiver applications with optical pre-amplification, and is available either with or without an internal 50Ω termination. The photodiode module is available in either a V-connector package or a miniature surface mount package with CPW (coplanar waveguide) RF output.
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Photodetectors
Packaged photodetectors based on PIN photodiodes for monitoring Q-switched and mode-locked pulsed lasers.
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Phototransistors
Phototransistors are photodiode-amplifier combinations integrated within a single silicon chip. The phototransistor can be viewed as a photodiode whose output current is fed into the base of a conventional transistor. These photodiode-amplifier combinations are put together to overcome the major limitation of photodiodes: unity gain. The typical gain of a phototransistor can range from 100 to over 1500.
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Highest SNR PDA Miniature Spectrometer
VS70-PDA
VS70-PDA OEM Photodiode Array Spectrometer is a high performance compact fiber coupled spectrometer covering wide spectral range of 200 to 1000 nm. This VS70 system for industrial applications uses a modified VS70 optical engine with Horiba’s type-IV Aberration-Corrected Flat-Field Holographic Ion-Etched concave grating optimized for UV-VIS and a linear photodiode array.
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Transimpedance Amplifiers
Artifex Engineering GmbH & Co. KG
Applications include photodetection with PMTs and photodiodes, spectroscopy, Scanning Tunneling Microscopy, ionization detectors, pyro and piezoelectric detectors.
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Portable UV Meter
UV_Log
Handheld UV meter device with data storage and USB connection, sensor probe inclusive, usable with any sglux photodiode.
