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Perpendicular MRAM
Polar Kerr System
The Polar Kerr System for MRAM utilizes the polar Magneto-Optical Kerr Effect (MOKE) to characterize the magnetic properties of multi-layer wafers used in the development and manufacturing of perpendicular MRAM. Utilizing a non-contact full-wafer measurement technique, the system creates a map of the magnetic properties of entire wafers up to 300 mm. The system is available in a manual loading or fully-automated configuration for use in R&D and/or production.
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Fully Automatic MRAM Probe System
*This system can measure MRAM characteristics automatically.*Generates strong and constant magnetic fields. (Max 1.5T, the highest in the industry)*Performs high speed sweep of magnetic field by using non-magnetic materials wafer chuck. (Max 4Hz, ±1T, the highest in the industry)
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MRAMs - Magnetoresistive Random Access Memory
Teledyne e2v’s MRAMs type EV2A16A is an extended-reliability version of the MR2A16A from Everspin. It is the ideal memory solution for applications that must permanently store and retrieve critical data quickly. It perfectly suits the requirements of critical embedded applications such as avionic, aerospace and defence environments.
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Fully Automatic MRAM Probe System With Initializers
*This system can measure MRAM characteristics automatically.*Automatically initializes(resets) before and shorten the time of measurement by having a built in initializer.*Generates strong and constant magnetic fields. (Prober: Max 1.5T, Initializer: 2.7T (the highest in the industry)
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Longitudinal Magneto-Optic Kerr Effect System
KerrMapper S300 and V300
The KerrMapper family of tools utilizes the longitudinal Magneto-Optical Kerr Effect (MOKE) to characterize the magnetic properties of magnetic multi-layer wafers for data storage, MRAM, and other magnetic sensors. Utilizing a non-contact full-wafer measurement technique, the KerrMapper S300 and V300 systems create a map of the magnetic properties of entire wafers.
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Automated Wafer Prober for Magnetic Devices and Sensors
Hprobe design and fabricate turnkey automated testing equipment (ATE) for electrical characterization and testing of integrated circuits under magnetic field such as MRAM (Magnetic Random Access Memory) and sensors. In each phase of the technology and product development as well as during mass manufacturing, a dedicated magnetic tester is available.
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FLASH Memory Endurance Cycling Systems
NTS3700 Series
FLASH memory endurance cycling systems are used to characterize and qualify the write/erase cycling endurance of FLASH memory devices, and to conduct functional testing of memory devices at extreme temperatures. A typical system consists of an environmental chamber, algorithmic pattern generator, programmable power supplies and system controller.Novtek’s systems can accommodate from 64 to 864 devices for parallel devices and . In addition to FLASH, the systems can also accommodate MRAM, EEPROM, EPROM, PROM (OUM), Mask ROM, SRAM, FeRAM, DRAM, PC Cards (PCMCIA), embedded FLASH microcontrollers and NVM based FPGA. The system's environmental chamber has a range of -55oC to +200oC and is ideal for temperature characterization of memory based devices and packages.
