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Physical Vapor Deposition Systems
Physical Vapor Deposition Systems offer maximum flexibility for a wide range of thin film deposition applications with advanced process capabilities, unsurpassed uniformity and multiple deposition modes.
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Matrix Vapor Deposition System
iMLayer
The iMLayer matrix vapor deposition system is sample pretreatment (application of matrix) in order to perform MALDI-MS imaging using an analysis system such as the iMScope imaging mass microscope or the MALDI-7090. With the iMLayer, the deposition method has been adopted as a pretreatment method to achieve high spatial resolution. By using this method, fine matrix crystal can be produced. Also, thanks to automated control, the coating thickness is reproducibly controlled as users configure.
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Metal-Organic Compound Chemical Vapor Deposition
Model MOCVD-500-A
For Experimental growth of quality epitaxial layers III-V, II-VI compounds. Multi-Layer structures. Directly heated silicon carbide coated, high purity graphite or PBN susceptor. Low mass thermocouple probe immersed into susceptor. Broad temperature and pressure application. Highest quality materials utilized throughout.
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Ozone Gas Generators
SEMOZON® Ozone gas generators and subsystems are the industry standard for compact, high concentration, ultra-clean ozone gas generation. Applications include Atomic Layer Deposition (ALD), Atomic Layer Etch (ALE), Chemical Vapor Deposition (CVD) and Wet Cleaning.
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Plasma CVD & Reactive Ion Etching System
MODEL DRIE-1100-LL-ECR
The Tek-Vac DRIE-1100-LL-ECR series systems are designed for both high-density plasma chemical vapor deposition and reactive ion etching of sub-micron integrated circuits, optical devices and RF microwave electron devices.
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High Temperature Absolute Pressure Transducers
Our high temperature Baratron® capacitance manometers are controlled to temperatures of 150°C or higher for use use in demanding semiconductor manufacturing vacuum processes such as metal etching and nitride film chemical vapor deposition (CVD).
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2 MHz RF Plasma Generators
NOVA® Series
The NOVA ; RF Plasma Generators are ideally suited for Plasma Enhanced Chemical Vapor Deposition (PECVD), High Density Plasma CVD (HDPCVD), etching and other thin film applications during the manufacture of integrated circuits, flat panel displays, and data storage devices.
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Ozone Gas Delivery Systems
MKS ozone gas delivery systems provide field-proven, high concentration, ultra-clean ozone generation for advanced thin film applications such as Atomic Layer Deposition (ALD), Chemical Vapor Deposition (CVD), Tetraethyl Orthosilicate (TEOS)/Ozone CVD (HDSACVD), contaminant removal and oxide growth. Gas delivery models have integrated ozone concentration monitoring, flow control, and power distribution. Additional system options include safety monitoring, status indicators and ozone destruction capability.
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Vapor Concentration Controller
VCC-100
One of the gas delivery methods from liquid and solid is bubbling. Bubbling is widely used in the Chemical Vapor Deposition (CVD) process. By applying the NDIR technology and the valve technology HORIBA has been developed for long time, the VCC-100 can maintain a constant concentration at a downstream of a bubbler in order to meet industry requirements from the advanced process control era.
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ICP Plasma System
The AXIC IsoLok® Inductively Coupled Plasma (ICP) Load-Locked Processing System from AXIC, Inc. defines a new concept in Deep Reactive Ion Etch (DRIE) and low temperature-low damage Plasma Enhanced Chemical Vapor Deposition (ICP-PECVD) plasma processing. The system is based on a modular design starting with a universal chamber and cabinet unit with ICP etch or deposition bottom electrodes available for easy installation into the chamber unit combined with a load-lock. We are confident you will find the ease of use, variety of plasma processes, serviceability and attractive pricing unsurpassed by any other plasma product in the market.
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Vapor Concentration Monitor
IR-300 Series
Metal-Organic Chemical Vapor Deposition (MOCVD) is widely used in the manufacture of LEDs, optical devices and other components. Liquid and solid precursors are delivered to the reaction chamber by controlling the temperature, pressure and the carrier gas flow rate (bubbling method). Process results can be affected by changes especially in temperature and liquid level. The in-line IR-300 Series measures and reports the precursor concentration in real time.
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GHW Series 13.56 MHz, 1.25, 2.5, And 5.0 KW High-Reliability RF Plasma Generators
The GHW Series RF power generators deliver maximum rated output powers of 1250, 2500 and 5000 Watts at a frequency of 13.56 MHz. The GHW generators offer field-proven reliability, exceptional stability, and unsurpassed repeatability for high uptime and process yield. They are ideally suited for Plasma Enhanced Chemical Vapor Deposition (PECVD), High Density Plasma CVD (HDPCVD), etching and other thin film applications during the manufacture of integrated circuits, flat panel displays, and data storage devices.
