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Deep Ultraviolet Spectrophotometer System
VUVAS-10X
A new ultraviolet spectrophotometer system for optical metrology just arrived at NASA Goddard! The VUVAS-10X spectrophotometer works best in the 90 to 160 nanometer wavelength range, also known as deep or vacuum ultraviolet (VUV) region. It uses a windowless hydrogen plasma light source and differential pump section to reach many wavelengths beyond those of conventional deuterium lamps. The source also works with other gases, or gas mixtures, for atomic spectral line emission from about 30 nanometers (double ionized Helium gas) up to the Visible light range. The new spectrophotometer system, McPherson VUVAS-10X, uses a one-meter focal length high-resolution monochromator with the special light source, scintillated detector and Model 121 goniometric sample chamber. The system is ideal for optical transmission, absorbance and specular reflectance at incident angles up to 60 degrees. This McPherson spectrophotometer system will help develop, inspect and qualify optical materials and coatings used for very high altitude and extraterrestrial space flight missions.
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Deep Ultraviolet Observation System for Microscope
U-UVF248
Model Capable of High-magnification/High-contrast Deep Ultraviolet (DUV) Observation. A Semiconductor / FPD Inspection Microscopes.
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DUV Lithography Systems
ASML's deep ultraviolet (DUV) lithography systems dive deep into the UV spectrum to print the tiny features that form the basis of the microchip.
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Ambient Pressure Photoemission Spectroscopy With Nitrogen Environment
The APS04-N2-RH incorporates a tuneable deep ultra-violet (UV) source outputting 3.4 - 7.0 eV, for absolute work function and highest occupied molecular orbital (HOMO) measurements, a surface photovoltage spectroscopy (SPS) module outputting 400 - 1000 nm for Voc and Eg measurements, together with a 50 x 50 mm scanning area for planar relative work function measurements (Fermi level).
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EUV Lithography
NXE systems
NXE lithography systems are used in high-volume manufacturing of advanced Logic and Memory chips. The first systems to use ASML’s novel 13.5 nm EUV light source, they print microchip features with a resolution of 13 nm, which is unreachable with deep ultraviolet (DUV) lithography. Chipmakers use our NXE systems to print the highly complex foundation layers of their 7 nm, 5 nm and 3 nm nodes. Read about how EUV lithography went from imagination to reality.
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Ultra-High Vacuum Ф4 Scanning Kelvin Probe
The Ф4 Ultra-high Vacuum Scanning Kelvin Probe system gives the user full access to work function measurements under vacuum with the ability to alter the temperature from 77 K to 860 K. The Kelvin Probe measurement has resolution of 1 - 3 meV for a 2 mm tip on a conducting sample. The sample is mounted on a plate that is located on a motorized (x, y, z) translator attached to a stainless-steel vacuum chamber. Phi 4 also comes with a photoemission spectroscopy system with a tuneable source (3.4 - 7.0 eV). The deep ultra-violet (DUV) light spot measures approximately 3 x 4 mm. Absolute work function measurements can be obtained with this system in the range of 4.0 - 6.5 eV with an accuracy of 0.05 - 0.1 eV.
