Showing results: 406 - 420 of 546 items found.
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Kratos Microwave Electronics Division
Kratos General Microwave (KGM) has developed a broad line of General Purpose RF and Microwave Synthesizers to be used in various applications. KGM has developed a line of high performance, broadband Fast Indirect Synthesizers (FIS) to provide a cost-effective solution to the requirements of new systems. Its high speed (as fast as 1 sec) provides an economical alternative to direct synthesizers for many applications. Because of its low phase noise, it is an excellent alternate to the much slower and generally less reliable YIG-based rf synthesizer.
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Ducommun Inc
Ducommun’s oscillator family includes FET based dielectric resonator oscillators (OFD), phase locked oscillators (OPL), Gunn diode based low cost Gunn oscillators (OGL), bias tuned Gunn oscillators (OGB), mechanically tuned oscillators (OGM), varactor tuned Gunn oscillators (OGV), injection locked Gunn oscillators (OGI) and Gunn oscillator bias regulators and modulators (OGR and OMR). In the mechanically tuned Gunn oscillator family, the ultra broadband series (OGF) delivers up to full waveguide tuning bandwidth.
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356A02 -
PCB Piezotronics, Inc.
Sensitivity (10 %)10 mV/g1.02 mV/(m/s) Measurement Range:500 g pk4900 m/s pk Frequency Range: (5 %)1 to 5000 Hz1 to 5000 Hz Frequency Range: (10 %)0.5 to 6000 Hz0.5 to 6000 Hz Resonant Frequency:25 kHz 25 kHz Broadband Resolution (1)0.0005 grms 0.005 m/s rms Non-Linearity: (400 g, 3920 m/s)1 % 1 % Non-Linearity (500 g, 4900 m/s)2 % 2 % Transverse Sensitivity:5 % 5 %.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Sample Technology
Unlike specialized RF and microwave module product suppliers, Shengbo Technology has accumulated rich experience in designing and developing broadband microwave test products. As a sophisticated RF and microwave test system, a large number of high-performance RF and microwave modules are required for system integration. To this end, we have conducted in-depth research.
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N9355F -
Keysight Technologies
The N9355F power limiter provides the best broadband input power protection to sensitive RF and microwave instruments and components, like network analyzers, spectrum analyzers, and amplifiers, from excess RF power, DC transients and ESD. Minimize your measurement uncertainty and improve your measurement accuracy with the limiter's superior RF performance.
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N9355B -
Keysight Technologies
The N9355B power limiter provides the best broadband input power protection to sensitive RF and microwave instruments and components, like network analyzers, spectrum analyzers, and amplifiers, from excess RF power, DC transients and ESD. Minimize your measurement uncertainty and improve your measurement accuracy with the limiter's superior RF performance.
