Showing results: 106 - 120 of 364 items found.
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Renesas Electronics Corp.
We offer high-performance products with low forward voltage (VF) and high-speed reverse recovery time (trr) for increasing device efficiency.We are also employing a new material (silicon carbide: SiC) for products with even higher efficiency.
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CCM1095 and CCM2096 -
Teledyne RF & Microwave
The CCM1095 and CCM2096 are power amplifiers that use current efficient Silicon Carbide output semi-conductors to achieve +35 to +38 dBm output power. An internal sequencing circuit is included to provide for safe operation of the output power device.
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FilmTek 2000M TSV -
Scientific Computing International
Advanced semiconductor packaging metrology system providing an unmatched combination of speed, accuracy, and precision for high-throughput measurements of resist thickness, through silicon vias (TSVs), Cu-pillars, bumps, redistribution layer (RDL) and other packaging processes.
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Renesas Electronics Corp.
Low input current and transistor output photocouplers (optocouplers) are optically coupled isolators containing a GaAs infrared light emitting diode and an NPN silicon phototransistor. This type features a fast response while operating on a low input current.
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Teledyne Princeton Instruments
Single channel detectors are used with IsoPlane, SpectraPro and TriVista spectrometers, enabling efficient operation from UV to IR. These include three photomultiplier tubes, two silicon detectors, plus InGaAs, PbS, InSb, HgCdTe and infrared detectors.
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RT70V series -
NAPSON Corp.
• Combinational measurement system by Measurement tester(RT-70V) & Stage.• Thickness input with easy JOG dial operation (RT-70V Tester)• Tester self-test function/Auto change-over measurement range function• Thickness & Temperature correction function for Silicon sample
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Renesas Electronics Corp.
DC input/Darlington transistor output photocouplers (optocouplers) are optically coupled isolators containing a GaAs infrared light emitting diode and an NPN silicon Darlington connected phototransistor. This type can operate on a low-current DC input because of its Darlington configuration.
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TE Connectivity Ltd.
TE Connectivity (TE) enables OEMs to measure force using MEMS-based technology load cells. The same proprietary piezoresistive silicon strain gage technology used to measure pressure can also be configured into a reliable, low-cost package to measure force.
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Fujikura Ltd.
Through state-of-the-art silicon MEMS(Micro Electronics Mechanical System) process and assembly technology, Fujikura produces various types of piezo-resistive pressure sensor such as sensing elements, integrated sensors and modules. The products feature high-accuracy, high-reliability and cost-effectiveness.
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Trek5 -
Breker Verification Systems
Breker’s solutions enable test reuse across simulation, emulation, prototyping and actual silicon, eliminating redundant effort across the development flow. The Breker “Trek” suite solves challenges across the functional verification process for large, complex semiconductors.
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SURFTENS HL Automatic -
Optik Elektronik Gerätetechnik GmbH
Fully automatic contact angle meter for silicon wafers up to 12 inch The contact angle measuring system SURFTENS HL automatic is designed for use in semiconductor industry and research, in particular for process control of wafer coating and in the photolithographic process.
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DSI -
Arasan Chip Systems, Inc.
The Arasan MIPI Display Serial Interface (DSI) Controller IP provides both device and host functionality. Additionally, the DSI Controller provides a high-speed serial interface between an application processor and display and follows a rigorous verification methodology to ensure interoperability of our DSI digital controller with our D-PHY analog IP. Arasan’s DSI solutions are MIPI standards-compliant and are designed to accelerate integration, lower risk and accelerate time to market for developers of display applications. Arasan’s expertise is backed by our unique silicon proven design discipline and product development process that ensures fast silicon success with our analog and digital IP.
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MWR-2S-3 -
HenergySolar
The device is designed for express non-destructive contactless local measurement of non-equilibrium charge carrier effective lifetime in silicon substrates, epi-wafers and solar cells at different stages of manufacturing cycle. It can be used for incoming and outcoming inspection of silicon ingots and wafers, tuning and periodic inspection of semiconductor and solar cell technology quality. Lifetime determination is based on measuring photoconductivity decay after pulselight photo-exciting with usage of reflected microwave as a probe.
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Model MOCVD-500-A -
TEK-VAC INDUSTRIES Inc.
For Experimental growth of quality epitaxial layers III-V, II-VI compounds. Multi-Layer structures. Directly heated silicon carbide coated, high purity graphite or PBN susceptor. Low mass thermocouple probe immersed into susceptor. Broad temperature and pressure application. Highest quality materials utilized throughout.
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DPW -
Chuan Sheng Electronics Co., Ltd.
•Wide range power supply•Measure by diffusion silicon sensor , advanced membrane isolation•Connection reverse protect ,OVP、OCP•Design for anti-interfere, anti-lightning strike•Compact and easy to install•2mS response time ,high accuracy ,high stability